MXSMCJLCE80E3/TR
vs
SMCJ78AHE3/9AT
feature comparison
All Stats
Differences Only
Rohs Code
Part Life Cycle Code
Obsolete
Obsolete
Ihs Manufacturer
MICROSEMI CORP
VISHAY SEMICONDUCTORS
Package Description
R-PDSO-C2
R-PDSO-C2
Reach Compliance Code
compliant
unknown
ECCN Code
EAR99
EAR99
HTS Code
8541.10.00.50
8541.10.00.50
Additional Feature
TR, 7 INCH: 750
EXCELLENT CLAMPING CAPABILITY
Breakdown Voltage-Max
108 V
95.8 V
Breakdown Voltage-Min
88.7 V
86.7 V
Breakdown Voltage-Nom
98.35 V
91.25 V
Clamping Voltage-Max
142 V
126 V
Configuration
SINGLE
SINGLE
Diode Element Material
SILICON
SILICON
Diode Type
TRANS VOLTAGE SUPPRESSOR DIODE
TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code
DO-214AB
DO-214AB
JESD-30 Code
R-PDSO-C2
R-PDSO-C2
JESD-609 Code
e3
e3
Non-rep Peak Rev Power Dis-Max
1500 W
1500 W
Number of Elements
1
1
Number of Terminals
2
2
Operating Temperature-Max
150 °C
150 °C
Operating Temperature-Min
-65 °C
-55 °C
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
SMALL OUTLINE
SMALL OUTLINE
Polarity
UNIDIRECTIONAL
UNIDIRECTIONAL
Power Dissipation-Max
5 W
6.5 W
Qualification Status
Not Qualified
Not Qualified
Reference Standard
MIL-19500
AEC-Q101; UL RECOGNIZED
Rep Pk Reverse Voltage-Max
80 V
78 V
Surface Mount
YES
YES
Technology
AVALANCHE
AVALANCHE
Terminal Finish
MATTE TIN
MATTE TIN
Terminal Form
C BEND
C BEND
Terminal Position
DUAL
DUAL
Base Number Matches
1
1
Pbfree Code
Part Package Code
DO-214AB
Pin Count
2
Forward Voltage-Max (VF)
3.5 V
Moisture Sensitivity Level
1
Peak Reflow Temperature (Cel)
260
Time@Peak Reflow Temperature-Max (s)
30
Compare MXSMCJLCE80E3/TR with alternatives
Compare SMCJ78AHE3/9AT with alternatives