MXSMCJ8.5CE3TR vs MVSMCJ8.5CTR feature comparison

MXSMCJ8.5CE3TR Microsemi Corporation

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MVSMCJ8.5CTR Microsemi Corporation

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Rohs Code Yes No
Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer MICROSEMI CORP MICROSEMI CORP
Part Package Code DO-214AB DO-214AB
Package Description PLASTIC PACKAGE-2 PLASTIC PACKAGE-2
Pin Count 2 2
Reach Compliance Code unknown unknown
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.50 8541.10.00.50
Additional Feature TR, 7 INCH: 750 TR, 7 INCH: 750
Breakdown Voltage-Max 11.5 V 11.5 V
Breakdown Voltage-Min 9.44 V 9.44 V
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code DO-214AB DO-214AB
JESD-30 Code R-PDSO-C2 R-PDSO-C2
JESD-609 Code e3 e0
Moisture Sensitivity Level 1 1
Non-rep Peak Rev Power Dis-Max 1500 W 1500 W
Number of Elements 1 1
Number of Terminals 2 2
Operating Temperature-Max 150 °C 150 °C
Operating Temperature-Min -65 °C -65 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Polarity BIDIRECTIONAL BIDIRECTIONAL
Power Dissipation-Max 1.56 W 1.56 W
Qualification Status Not Qualified Not Qualified
Rep Pk Reverse Voltage-Max 8.5 V 8.5 V
Surface Mount YES YES
Technology AVALANCHE AVALANCHE
Terminal Finish MATTE TIN TIN LEAD
Terminal Form C BEND C BEND
Terminal Position DUAL DUAL
Base Number Matches 1 1
Breakdown Voltage-Nom 10.47 V
Clamping Voltage-Max 15.9 V

Compare MXSMCJ8.5CE3TR with alternatives

Compare MVSMCJ8.5CTR with alternatives