MXSMCGLCE80E3/TR vs MXSMCGLCE80E3 feature comparison

MXSMCGLCE80E3/TR Microsemi Corporation

Buy Now Datasheet

MXSMCGLCE80E3 Microsemi Corporation

Buy Now Datasheet
Rohs Code Yes Yes
Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer MICROSEMI CORP MICROSEMI CORP
Package Description R-PDSO-G2 R-PDSO-G2
Reach Compliance Code compliant compliant
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.50 8541.10.00.50
Additional Feature TR, 7 INCH: 750
Breakdown Voltage-Max 108 V 108 V
Breakdown Voltage-Min 88.7 V 88.7 V
Breakdown Voltage-Nom 98.35 V 98.35 V
Clamping Voltage-Max 142 V 142 V
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code DO-215AB DO-215AB
JESD-30 Code R-PDSO-G2 R-PDSO-G2
JESD-609 Code e3 e3
Non-rep Peak Rev Power Dis-Max 1500 W 1500 W
Number of Elements 1 1
Number of Terminals 2 2
Operating Temperature-Max 150 °C 150 °C
Operating Temperature-Min -65 °C -65 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Polarity UNIDIRECTIONAL UNIDIRECTIONAL
Power Dissipation-Max 5 W 5 W
Qualification Status Not Qualified Not Qualified
Reference Standard MIL-19500 MIL-19500
Rep Pk Reverse Voltage-Max 80 V 80 V
Surface Mount YES YES
Technology AVALANCHE AVALANCHE
Terminal Finish MATTE TIN MATTE TIN
Terminal Form GULL WING GULL WING
Terminal Position DUAL DUAL
Base Number Matches 1 1
Part Package Code DO-215AB
Pin Count 2
Moisture Sensitivity Level 1

Compare MXSMCGLCE80E3/TR with alternatives

Compare MXSMCGLCE80E3 with alternatives