MXSMCG5632 vs MSMCGLCE7.5AE3TR feature comparison

MXSMCG5632 Microsemi Corporation

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MSMCGLCE7.5AE3TR Microsemi Corporation

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Rohs Code No Yes
Part Life Cycle Code Obsolete Transferred
Ihs Manufacturer MICROSEMI CORP MICROSEMI CORP
Part Package Code DO-215AB DO-215AB
Package Description R-PDSO-G2 R-PDSO-G2
Pin Count 2 2
Reach Compliance Code unknown compliant
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.50 8541.10.00.50
Additional Feature HIGH RELIABILITY HIGH RELIABILITY
Breakdown Voltage-Max 10 V 10.2 V
Breakdown Voltage-Min 8.19 V 8.33 V
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code DO-215AB DO-215AB
JESD-30 Code R-PDSO-G2 R-PDSO-G2
JESD-609 Code e0
Moisture Sensitivity Level 1
Non-rep Peak Rev Power Dis-Max 1500 W 1500 W
Number of Elements 1 1
Number of Terminals 2 2
Operating Temperature-Max 150 °C 150 °C
Operating Temperature-Min -55 °C -65 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Polarity UNIDIRECTIONAL UNIDIRECTIONAL
Power Dissipation-Max 5 W 5 W
Qualification Status Not Qualified Not Qualified
Rep Pk Reverse Voltage-Max 7.37 V 7.5 V
Surface Mount YES YES
Technology AVALANCHE AVALANCHE
Terminal Finish TIN LEAD
Terminal Form GULL WING GULL WING
Terminal Position DUAL DUAL
Base Number Matches 1 1
Breakdown Voltage-Nom 9.265 V
Clamping Voltage-Max 12.9 V
Diode Capacitance-Min 100 pF
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reference Standard IEC-61000-4-2, 4-4, 4-5
Reverse Current-Max 250 µA
Reverse Test Voltage 7.5 V
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED

Compare MXSMCG5632 with alternatives

Compare MSMCGLCE7.5AE3TR with alternatives