MXSMAJP4KE200AE3 vs P4SMA200AHE3/61 feature comparison

MXSMAJP4KE200AE3 Microsemi Corporation

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P4SMA200AHE3/61 Vishay Semiconductors

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Rohs Code Yes Yes
Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer MICROSEMI CORP VISHAY SEMICONDUCTORS
Part Package Code DO-214AC DO-214AC
Package Description R-PDSO-C2 R-PDSO-C2
Pin Count 2 2
Reach Compliance Code unknown unknown
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.50 8541.10.00.50
Breakdown Voltage-Max 210 V 210 V
Breakdown Voltage-Min 190 V 190 V
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code DO-214AC DO-214AC
JESD-30 Code R-PDSO-C2 R-PDSO-C2
JESD-609 Code e3 e3
Moisture Sensitivity Level 1 1
Non-rep Peak Rev Power Dis-Max 400 W 400 W
Number of Elements 1 1
Number of Terminals 2 2
Operating Temperature-Max 150 °C 150 °C
Operating Temperature-Min -65 °C -65 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Polarity UNIDIRECTIONAL UNIDIRECTIONAL
Power Dissipation-Max 1.52 W 3.3 W
Qualification Status Not Qualified Not Qualified
Rep Pk Reverse Voltage-Max 171 V 171 V
Surface Mount YES YES
Technology AVALANCHE AVALANCHE
Terminal Finish MATTE TIN Matte Tin (Sn)
Terminal Form C BEND C BEND
Terminal Position DUAL DUAL
Base Number Matches 1 1
Pbfree Code Yes
Additional Feature EXCELLENT CLAMPING CAPABILITY
Breakdown Voltage-Nom 200 V
Clamping Voltage-Max 274 V
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 30

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