MXPLAD36KP170AE3 vs MAPLAD36KP170AE3 feature comparison

MXPLAD36KP170AE3 Microchip Technology Inc

Buy Now Datasheet

MAPLAD36KP170AE3 Microchip Technology Inc

Buy Now Datasheet
Rohs Code Yes Yes
Part Life Cycle Code Active Active
Ihs Manufacturer MICROCHIP TECHNOLOGY INC MICROCHIP TECHNOLOGY INC
Reach Compliance Code compliant compliant
Additional Feature HIGH RELIABILITY HIGH RELIABILITY
Breakdown Voltage-Max 209 V 209 V
Breakdown Voltage-Min 189 V 189 V
Breakdown Voltage-Nom 199 V 199 V
Case Connection CATHODE CATHODE
Clamping Voltage-Max 275 V 275 V
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 Code S-PSSO-G1 S-PSSO-G1
Non-rep Peak Rev Power Dis-Max 36000 W 36000 W
Number of Elements 1 1
Number of Terminals 1 1
Operating Temperature-Max 150 °C 150 °C
Operating Temperature-Min -55 °C -55 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape SQUARE SQUARE
Package Style SMALL OUTLINE SMALL OUTLINE
Polarity UNIDIRECTIONAL UNIDIRECTIONAL
Power Dissipation-Max 2.5 W 2.5 W
Reference Standard AEC-Q101; IEC-61000-4-2, 4-4, 4-5; MIL-19500 AEC-Q101; IEC-61000-4-2, 4-4, 4-5; MIL-19500
Rep Pk Reverse Voltage-Max 170 V 170 V
Reverse Current-Max 10 µA 10 µA
Reverse Test Voltage 170 V 170 V
Surface Mount YES YES
Technology AVALANCHE AVALANCHE
Terminal Form GULL WING GULL WING
Terminal Position SINGLE SINGLE
Base Number Matches 1 1
Factory Lead Time 40 Weeks

Compare MXPLAD36KP170AE3 with alternatives

Compare MAPLAD36KP170AE3 with alternatives