MXPLAD30KP70AE3
vs
MXPLAD30KP70AE3TR
feature comparison
All Stats
Differences Only
Rohs Code
Part Life Cycle Code
Active
Transferred
Ihs Manufacturer
MICROCHIP TECHNOLOGY INC
MICROSEMI CORP
Reach Compliance Code
compliant
unknown
Additional Feature
HIGH RELIABILITY
Breakdown Voltage-Max
86 V
86 V
Breakdown Voltage-Min
77.8 V
77.8 V
Breakdown Voltage-Nom
81.9 V
81.9 V
Case Connection
CATHODE
Clamping Voltage-Max
113 V
113 V
Configuration
SINGLE
SINGLE
Diode Element Material
SILICON
SILICON
Diode Type
TRANS VOLTAGE SUPPRESSOR DIODE
TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 Code
S-PSSO-G1
S-PSSO-G1
JESD-609 Code
e3
e3
Moisture Sensitivity Level
1
Non-rep Peak Rev Power Dis-Max
30000 W
30000 W
Number of Elements
1
1
Number of Terminals
1
1
Operating Temperature-Max
150 °C
150 °C
Operating Temperature-Min
-55 °C
-65 °C
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
SQUARE
SQUARE
Package Style
SMALL OUTLINE
SMALL OUTLINE
Polarity
UNIDIRECTIONAL
UNIDIRECTIONAL
Power Dissipation-Max
2.5 W
2.5 W
Qualification Status
Not Qualified
Not Qualified
Reference Standard
IEC-61000-4-2, 4-4, 4-5; MIL-19500
Rep Pk Reverse Voltage-Max
70 V
70 V
Surface Mount
YES
YES
Technology
AVALANCHE
AVALANCHE
Terminal Finish
MATTE TIN
MATTE TIN
Terminal Form
GULL WING
GULL WING
Terminal Position
SINGLE
SINGLE
Base Number Matches
2
2
Pbfree Code
Package Description
S-PSSO-G1
Pin Count
1
ECCN Code
EAR99
HTS Code
8541.10.00.50
Compare MXPLAD30KP70AE3 with alternatives
Compare MXPLAD30KP70AE3TR with alternatives