MXPLAD30KP64AE3 vs MXPLAD30KP64ATR feature comparison

MXPLAD30KP64AE3 Microchip Technology Inc

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MXPLAD30KP64ATR Microsemi Corporation

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Rohs Code Yes No
Part Life Cycle Code Active Transferred
Ihs Manufacturer MICROCHIP TECHNOLOGY INC MICROSEMI CORP
Reach Compliance Code compliant unknown
Additional Feature HIGH RELIABILITY HIGH RELIABILITY
Breakdown Voltage-Max 78.6 V 78.6 V
Breakdown Voltage-Min 71.1 V 71.1 V
Breakdown Voltage-Nom 74.85 V 74.85 V
Case Connection CATHODE CATHODE
Clamping Voltage-Max 103 V 103 V
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 Code S-PSSO-G1 R-PSSO-G1
JESD-609 Code e3 e0
Moisture Sensitivity Level 1 1
Non-rep Peak Rev Power Dis-Max 30000 W 30000 W
Number of Elements 1 1
Number of Terminals 1 1
Operating Temperature-Max 150 °C 150 °C
Operating Temperature-Min -55 °C -65 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape SQUARE RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Polarity UNIDIRECTIONAL UNIDIRECTIONAL
Power Dissipation-Max 2.5 W 2.5 W
Qualification Status Not Qualified Not Qualified
Reference Standard IEC-61000-4-2, 4-4, 4-5; MIL-19500
Rep Pk Reverse Voltage-Max 64 V 64 V
Surface Mount YES YES
Technology AVALANCHE AVALANCHE
Terminal Finish MATTE TIN TIN LEAD
Terminal Form GULL WING GULL WING
Terminal Position SINGLE SINGLE
Base Number Matches 2 2
Pbfree Code No
Package Description R-PSSO-G1
Pin Count 1
ECCN Code EAR99
HTS Code 8541.10.00.50

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