MXPLAD30KP51CATR vs MXPLAD30KP51CAE3 feature comparison

MXPLAD30KP51CATR Microsemi Corporation

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MXPLAD30KP51CAE3 Microchip Technology Inc

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Pbfree Code No
Rohs Code No Yes
Part Life Cycle Code Transferred Active
Ihs Manufacturer MICROSEMI CORP MICROCHIP TECHNOLOGY INC
Package Description S-PSSO-G1
Pin Count 1
Reach Compliance Code unknown compliant
ECCN Code EAR99
HTS Code 8541.10.00.50
Breakdown Voltage-Max 62.7 V 62.7 V
Breakdown Voltage-Min 56.7 V 56.7 V
Breakdown Voltage-Nom 59.7 V 59.7 V
Clamping Voltage-Max 82.4 V 82.4 V
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 Code S-PSSO-G1 S-PSSO-G1
JESD-609 Code e0 e3
Moisture Sensitivity Level 1 1
Non-rep Peak Rev Power Dis-Max 30000 W 30000 W
Number of Elements 1 1
Number of Terminals 1 1
Operating Temperature-Max 150 °C 150 °C
Operating Temperature-Min -65 °C -55 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape SQUARE SQUARE
Package Style SMALL OUTLINE SMALL OUTLINE
Polarity BIDIRECTIONAL BIDIRECTIONAL
Power Dissipation-Max 2.5 W 2.5 W
Qualification Status Not Qualified Not Qualified
Rep Pk Reverse Voltage-Max 51 V 51 V
Surface Mount YES YES
Technology AVALANCHE AVALANCHE
Terminal Finish TIN LEAD MATTE TIN
Terminal Form GULL WING GULL WING
Terminal Position SINGLE SINGLE
Base Number Matches 1 2
Additional Feature HIGH RELIABILITY
Reference Standard IEC-61000-4-2, 4-4, 4-5; MIL-19500

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Compare MXPLAD30KP51CAE3 with alternatives