MXPLAD30KP33AE3 vs MXPLAD30KP33A feature comparison

MXPLAD30KP33AE3 Microchip Technology Inc

Buy Now Datasheet

MXPLAD30KP33A Microchip Technology Inc

Buy Now Datasheet
Rohs Code Yes No
Part Life Cycle Code Active Active
Ihs Manufacturer MICROCHIP TECHNOLOGY INC MICROCHIP TECHNOLOGY INC
Reach Compliance Code compliant compliant
Additional Feature HIGH RELIABILITY HIGH RELIABILITY
Breakdown Voltage-Max 40.6 V 40.6 V
Breakdown Voltage-Min 36.7 V 36.7 V
Breakdown Voltage-Nom 38.65 V 38.65 V
Case Connection CATHODE CATHODE
Clamping Voltage-Max 53.3 V 53.3 V
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 Code S-PSSO-G1 S-PSSO-G1
JESD-609 Code e3 e0
Moisture Sensitivity Level 1 1
Non-rep Peak Rev Power Dis-Max 30000 W 30000 W
Number of Elements 1 1
Number of Terminals 1 1
Operating Temperature-Max 150 °C 150 °C
Operating Temperature-Min -55 °C -55 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape SQUARE SQUARE
Package Style SMALL OUTLINE SMALL OUTLINE
Polarity UNIDIRECTIONAL UNIDIRECTIONAL
Power Dissipation-Max 2.5 W 2.5 W
Qualification Status Not Qualified Not Qualified
Reference Standard IEC-61000-4-2, 4-4, 4-5; MIL-19500 IEC-61000-4-2, 4-4, 4-5; MIL-19500
Rep Pk Reverse Voltage-Max 33 V 33 V
Surface Mount YES YES
Technology AVALANCHE AVALANCHE
Terminal Finish MATTE TIN TIN LEAD
Terminal Form GULL WING GULL WING
Terminal Position SINGLE SINGLE
Base Number Matches 2 2
Factory Lead Time 40 Weeks

Compare MXPLAD30KP33AE3 with alternatives

Compare MXPLAD30KP33A with alternatives