MXPLAD18KP8.0AE3 vs MXPLAD18KP8.0A feature comparison

MXPLAD18KP8.0AE3 Microchip Technology Inc

Buy Now Datasheet

MXPLAD18KP8.0A Microchip Technology Inc

Buy Now Datasheet
Rohs Code Yes No
Part Life Cycle Code Active Active
Ihs Manufacturer MICROCHIP TECHNOLOGY INC MICROCHIP TECHNOLOGY INC
Reach Compliance Code compliant compliant
Additional Feature HIGH RELIABILITY HIGH RELIABILITY
Breakdown Voltage-Max 9.83 V 9.83 V
Breakdown Voltage-Min 8.89 V 8.89 V
Breakdown Voltage-Nom 9.36 V 9.36 V
Case Connection CATHODE CATHODE
Clamping Voltage-Max 13.6 V 13.6 V
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 Code S-PSSO-G1 S-PSSO-G1
Non-rep Peak Rev Power Dis-Max 18000 W 18000 W
Number of Elements 1 1
Number of Terminals 1 1
Operating Temperature-Max 150 °C 150 °C
Operating Temperature-Min -55 °C -55 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape SQUARE SQUARE
Package Style SMALL OUTLINE SMALL OUTLINE
Polarity UNIDIRECTIONAL UNIDIRECTIONAL
Power Dissipation-Max 2.5 W 2.5 W
Reference Standard AEC-Q101; IEC-61000-4-2, 4-4, 4-5; MIL-19500 AEC-Q101; IEC-61000-4-2, 4-4, 4-5; MIL-19500
Rep Pk Reverse Voltage-Max 8 V 8 V
Surface Mount YES YES
Technology AVALANCHE AVALANCHE
Terminal Form GULL WING GULL WING
Terminal Position SINGLE SINGLE
Base Number Matches 1 2

Compare MXPLAD18KP8.0AE3 with alternatives

Compare MXPLAD18KP8.0A with alternatives