MXPLAD18KP8.0AE3
vs
MPLAD18KP8.0AE3
feature comparison
All Stats
Differences Only
Rohs Code
Part Life Cycle Code
Active
Active
Ihs Manufacturer
MICROCHIP TECHNOLOGY INC
MICROCHIP TECHNOLOGY INC
Reach Compliance Code
compliant
compliant
Additional Feature
HIGH RELIABILITY
Breakdown Voltage-Max
9.83 V
9.83 V
Breakdown Voltage-Min
8.89 V
8.89 V
Breakdown Voltage-Nom
9.36 V
9.36 V
Case Connection
CATHODE
CATHODE
Clamping Voltage-Max
13.6 V
13.6 V
Configuration
SINGLE
SINGLE
Diode Element Material
SILICON
SILICON
Diode Type
TRANS VOLTAGE SUPPRESSOR DIODE
TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 Code
S-PSSO-G1
S-PSSO-G1
Non-rep Peak Rev Power Dis-Max
18000 W
18000 W
Number of Elements
1
1
Number of Terminals
1
1
Operating Temperature-Max
150 °C
150 °C
Operating Temperature-Min
-55 °C
-55 °C
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
SQUARE
SQUARE
Package Style
SMALL OUTLINE
SMALL OUTLINE
Polarity
UNIDIRECTIONAL
UNIDIRECTIONAL
Power Dissipation-Max
2.5 W
2.5 W
Reference Standard
AEC-Q101; IEC-61000-4-2, 4-4, 4-5; MIL-19500
AEC-Q101; MIL-STD-750
Rep Pk Reverse Voltage-Max
8 V
8 V
Surface Mount
YES
YES
Technology
AVALANCHE
AVALANCHE
Terminal Form
GULL WING
GULL WING
Terminal Position
SINGLE
SINGLE
Base Number Matches
1
1
Factory Lead Time
40 Weeks
Reverse Current-Max
450 µA
Reverse Test Voltage
8 V
Compare MXPLAD18KP8.0AE3 with alternatives
Compare MPLAD18KP8.0AE3 with alternatives