MXPLAD18KP10AE3
vs
MAPLAD18KP10A
feature comparison
All Stats
Differences Only
Rohs Code
Part Life Cycle Code
Active
Active
Ihs Manufacturer
MICROCHIP TECHNOLOGY INC
MICROCHIP TECHNOLOGY INC
Reach Compliance Code
compliant
compliant
Additional Feature
HIGH RELIABILITY
HIGH RELIABILITY
Breakdown Voltage-Max
12.3 V
12.3 V
Breakdown Voltage-Min
11.1 V
11.1 V
Breakdown Voltage-Nom
11.7 V
11.7 V
Case Connection
CATHODE
CATHODE
Clamping Voltage-Max
17 V
17 V
Configuration
SINGLE
SINGLE
Diode Element Material
SILICON
SILICON
Diode Type
TRANS VOLTAGE SUPPRESSOR DIODE
TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 Code
S-PSSO-G1
S-PSSO-G1
Non-rep Peak Rev Power Dis-Max
18000 W
18000 W
Number of Elements
1
1
Number of Terminals
1
1
Operating Temperature-Max
150 °C
150 °C
Operating Temperature-Min
-55 °C
-55 °C
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
SQUARE
SQUARE
Package Style
SMALL OUTLINE
SMALL OUTLINE
Polarity
UNIDIRECTIONAL
UNIDIRECTIONAL
Power Dissipation-Max
2.5 W
2.5 W
Reference Standard
AEC-Q101; IEC-61000-4-2, 4-4, 4-5; MIL-19500
AEC-Q101; IEC-61000-4-2, 4-4, 4-5; MIL-19500
Rep Pk Reverse Voltage-Max
10 V
10 V
Surface Mount
YES
YES
Technology
AVALANCHE
AVALANCHE
Terminal Form
GULL WING
GULL WING
Terminal Position
SINGLE
SINGLE
Base Number Matches
1
2
Factory Lead Time
40 Weeks
Reverse Current-Max
45 µA
Reverse Test Voltage
10 V
Compare MXPLAD18KP10AE3 with alternatives
Compare MAPLAD18KP10A with alternatives