MXPLAD15KP8.0AE3
vs
MXLPLAD15KP8.0AE3TR
feature comparison
All Stats
Differences Only
Rohs Code
Part Life Cycle Code
Active
Active
Ihs Manufacturer
MICROCHIP TECHNOLOGY INC
MICROCHIP TECHNOLOGY INC
Reach Compliance Code
compliant
compliant
Additional Feature
HIGH RELIABILITY
HIGH RELIABILITY
Breakdown Voltage-Max
9.83 V
9.83 V
Breakdown Voltage-Min
8.89 V
8.89 V
Breakdown Voltage-Nom
9.36 V
9.36 V
Case Connection
CATHODE
CATHODE
Clamping Voltage-Max
13.6 V
13.6 V
Configuration
SINGLE
SINGLE
Diode Element Material
SILICON
SILICON
Diode Type
TRANS VOLTAGE SUPPRESSOR DIODE
TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 Code
S-PSSO-G1
R-PSSO-G1
JESD-609 Code
e3
Moisture Sensitivity Level
1
Non-rep Peak Rev Power Dis-Max
15000 W
15000 W
Number of Elements
1
1
Number of Terminals
1
1
Operating Temperature-Max
150 °C
150 °C
Operating Temperature-Min
-55 °C
-55 °C
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
SQUARE
RECTANGULAR
Package Style
SMALL OUTLINE
SMALL OUTLINE
Polarity
UNIDIRECTIONAL
UNIDIRECTIONAL
Power Dissipation-Max
2.5 W
2.5 W
Qualification Status
Not Qualified
Not Qualified
Reference Standard
IEC-61000-4-2, 4-4, 4-5; MIL-19500
MIL-19500
Rep Pk Reverse Voltage-Max
8 V
8 V
Surface Mount
YES
YES
Technology
AVALANCHE
AVALANCHE
Terminal Finish
MATTE TIN
Terminal Form
GULL WING
GULL WING
Terminal Position
SINGLE
SINGLE
Base Number Matches
2
1
Package Description
R-PSSO-G1
ECCN Code
EAR99
HTS Code
8541.10.00.50
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
Compare MXPLAD15KP8.0AE3 with alternatives
Compare MXLPLAD15KP8.0AE3TR with alternatives