MXPLAD15KP40CAE3
vs
MXPLAD15KP40CAE3TR
feature comparison
All Stats
Differences Only
Rohs Code
Part Life Cycle Code
Active
Transferred
Ihs Manufacturer
MICROCHIP TECHNOLOGY INC
MICROSEMI CORP
Reach Compliance Code
compliant
compliant
Additional Feature
HIGH RELIABILITY
HIGH RELIABILITY
Breakdown Voltage-Max
49.1 V
49.1 V
Breakdown Voltage-Min
44.4 V
44.4 V
Breakdown Voltage-Nom
46.75 V
46.75 V
Clamping Voltage-Max
64.5 V
64.5 V
Configuration
SINGLE
SINGLE
Diode Element Material
SILICON
SILICON
Diode Type
TRANS VOLTAGE SUPPRESSOR DIODE
TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 Code
S-PSSO-G1
R-PSSO-G1
JESD-609 Code
e3
Moisture Sensitivity Level
1
Non-rep Peak Rev Power Dis-Max
15000 W
15000 W
Number of Elements
1
1
Number of Terminals
1
1
Operating Temperature-Max
150 °C
Operating Temperature-Min
-55 °C
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
SQUARE
RECTANGULAR
Package Style
SMALL OUTLINE
SMALL OUTLINE
Polarity
BIDIRECTIONAL
BIDIRECTIONAL
Power Dissipation-Max
2.5 W
2.5 W
Qualification Status
Not Qualified
Not Qualified
Reference Standard
IEC-61000-4-2, 4-4, 4-5; MIL-19500
MIL-19500
Rep Pk Reverse Voltage-Max
40 V
40 V
Surface Mount
YES
YES
Technology
AVALANCHE
AVALANCHE
Terminal Finish
MATTE TIN
Terminal Form
GULL WING
GULL WING
Terminal Position
SINGLE
SINGLE
Base Number Matches
2
1
Package Description
R-PSSO-G1
Pin Count
1
ECCN Code
EAR99
HTS Code
8541.10.00.50
Case Connection
CATHODE
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
Compare MXPLAD15KP40CAE3 with alternatives
Compare MXPLAD15KP40CAE3TR with alternatives