MXPLAD15KP10ATR vs MPLAD15KP10AE3 feature comparison

MXPLAD15KP10ATR Microsemi Corporation

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MPLAD15KP10AE3 Microchip Technology Inc

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Pbfree Code No
Rohs Code No Yes
Part Life Cycle Code Transferred Active
Ihs Manufacturer MICROSEMI CORP MICROCHIP TECHNOLOGY INC
Package Description PLASTIC PACKAGE-1 R-PSSO-G1
Pin Count 1
Reach Compliance Code unknown compliant
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.50 8541.10.00.50
Breakdown Voltage-Max 12.3 V 12.3 V
Breakdown Voltage-Min 11.1 V 11.1 V
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 Code S-PSSO-G1 R-PSSO-G1
JESD-609 Code e0 e3
Non-rep Peak Rev Power Dis-Max 15000 W 15000 W
Number of Elements 1 1
Number of Terminals 1 1
Operating Temperature-Max 150 °C 150 °C
Operating Temperature-Min -55 °C -55 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape SQUARE RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Polarity UNIDIRECTIONAL UNIDIRECTIONAL
Power Dissipation-Max 2.5 W 2.5 W
Qualification Status Not Qualified Not Qualified
Rep Pk Reverse Voltage-Max 10 V 10 V
Surface Mount YES YES
Technology AVALANCHE AVALANCHE
Terminal Finish TIN LEAD MATTE TIN
Terminal Form GULL WING GULL WING
Terminal Position SINGLE SINGLE
Base Number Matches 1 2
Factory Lead Time 40 Weeks
Additional Feature HIGH RELIABILITY
Breakdown Voltage-Nom 11.7 V
Case Connection CATHODE
Clamping Voltage-Max 17 V
Moisture Sensitivity Level 1
Reference Standard MIL-19500

Compare MXPLAD15KP10ATR with alternatives

Compare MPLAD15KP10AE3 with alternatives