MXP4KE36AE3
vs
MXP4KE36AE3
feature comparison
| Rohs Code |
Yes
|
Yes
|
| Part Life Cycle Code |
Active
|
Transferred
|
| Ihs Manufacturer |
MICROCHIP TECHNOLOGY INC
|
MICROSEMI CORP
|
| Reach Compliance Code |
compliant
|
compliant
|
| Additional Feature |
HIGH RELIABILITY
|
|
| Breakdown Voltage-Max |
37.8 V
|
|
| Breakdown Voltage-Min |
34.2 V
|
|
| Breakdown Voltage-Nom |
36 V
|
|
| Case Connection |
ISOLATED
|
|
| Clamping Voltage-Max |
49.9 V
|
|
| Configuration |
SINGLE
|
|
| Diode Element Material |
SILICON
|
|
| Diode Type |
TRANS VOLTAGE SUPPRESSOR DIODE
|
TRANS VOLTAGE SUPPRESSOR DIODE
|
| Forward Voltage-Max (VF) |
3.5 V
|
|
| JEDEC-95 Code |
DO-204AL
|
|
| JESD-30 Code |
O-PALF-W2
|
|
| JESD-609 Code |
e3
|
e3
|
| Non-rep Peak Rev Power Dis-Max |
400 W
|
|
| Number of Elements |
1
|
|
| Number of Terminals |
2
|
|
| Operating Temperature-Max |
150 °C
|
|
| Operating Temperature-Min |
-65 °C
|
|
| Package Body Material |
PLASTIC/EPOXY
|
|
| Package Shape |
ROUND
|
|
| Package Style |
LONG FORM
|
|
| Polarity |
UNIDIRECTIONAL
|
|
| Power Dissipation-Max |
1.13 W
|
|
| Reference Standard |
IEC-61000-4-2,4-4,4-5; MIL-PRF-19500; MIL-STD-750
|
|
| Rep Pk Reverse Voltage-Max |
30.8 V
|
|
| Reverse Current-Max |
1 µA
|
|
| Reverse Test Voltage |
30.8 V
|
|
| Surface Mount |
NO
|
|
| Technology |
AVALANCHE
|
|
| Terminal Finish |
Matte Tin (Sn)
|
Matte Tin (Sn)
|
| Terminal Form |
WIRE
|
|
| Terminal Position |
AXIAL
|
|
| Base Number Matches |
1
|
2
|
| ECCN Code |
|
EAR99
|
| HTS Code |
|
8541.10.00.50
|
|
|
|
Compare MXP4KE36AE3 with alternatives
Compare MXP4KE36AE3 with alternatives