MXLUPTB5E3 vs MVUPTB5 feature comparison

MXLUPTB5E3 Microchip Technology Inc

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MVUPTB5 Microsemi Corporation

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Rohs Code Yes No
Part Life Cycle Code Active Obsolete
Ihs Manufacturer MICROCHIP TECHNOLOGY INC MICROSEMI CORP
Reach Compliance Code compliant unknown
Factory Lead Time 40 Weeks
Additional Feature HIGH RELIABILITY, MIL-STD-750 LOW LEAKAGE CURRENT
Breakdown Voltage-Min 6 V 6 V
Clamping Voltage-Max 9.5 V
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code DO-216AA DO-216AA
JESD-30 Code S-PSSO-G1 R-PSSO-G1
JESD-609 Code e3 e0
Moisture Sensitivity Level 1
Non-rep Peak Rev Power Dis-Max 1000 W 100 W
Number of Elements 1 1
Number of Terminals 1 1
Operating Temperature-Max 150 °C
Operating Temperature-Min -65 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape SQUARE RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Polarity BIDIRECTIONAL BIDIRECTIONAL
Power Dissipation-Max 2.5 W 2.5 W
Reference Standard AEC-Q101; IEC-61000-4-2, 4-4, 4-5; MIL-PRF-19500
Rep Pk Reverse Voltage-Max 5 V 5 V
Reverse Current-Max 50 µA
Reverse Test Voltage 5 V
Surface Mount YES YES
Technology AVALANCHE AVALANCHE
Terminal Finish MATTE TIN TIN LEAD
Terminal Form GULL WING GULL WING
Terminal Position SINGLE SINGLE
Base Number Matches 2 1
Part Package Code DO-216AA
Package Description R-PSSO-G1
Pin Count 2
ECCN Code EAR99
HTS Code 8541.10.00.50
Case Connection CATHODE
Qualification Status Not Qualified

Compare MXLUPTB5E3 with alternatives

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