MXLSMCJLCE51A vs SMCG51A-M3/9AT feature comparison

MXLSMCJLCE51A Microchip Technology Inc

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SMCG51A-M3/9AT Vishay Semiconductors

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Rohs Code No
Part Life Cycle Code Active Active
Ihs Manufacturer MICROCHIP TECHNOLOGY INC VISHAY SEMICONDUCTORS
Package Description PLASTIC, SMCJ, 2 PIN R-PDSO-G2
Reach Compliance Code compliant unknown
Additional Feature HIGH RELIABILITY
Breakdown Voltage-Max 62.7 V 62.7 V
Breakdown Voltage-Min 56.7 V 56.7 V
Breakdown Voltage-Nom 59.7 V 59.7 V
Clamping Voltage-Max 82.4 V 82.4 V
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code DO-214AB DO-215AB
JESD-30 Code R-PDSO-C2 R-PDSO-G2
JESD-609 Code e0 e3
Moisture Sensitivity Level 1 1
Non-rep Peak Rev Power Dis-Max 1500 W 1500 W
Number of Elements 1 1
Number of Terminals 2 2
Operating Temperature-Max 150 °C 150 °C
Operating Temperature-Min -65 °C -55 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Polarity UNIDIRECTIONAL UNIDIRECTIONAL
Power Dissipation-Max 5 W 6.5 W
Qualification Status Not Qualified
Rep Pk Reverse Voltage-Max 51 V 51 V
Surface Mount YES YES
Technology AVALANCHE AVALANCHE
Terminal Finish TIN LEAD MATTE TIN
Terminal Form C BEND GULL WING
Terminal Position DUAL DUAL
Base Number Matches 2 1
Part Package Code DO-215AB
Pin Count 2
ECCN Code EAR99
HTS Code 8541.10.00.50
Peak Reflow Temperature (Cel) 260
Reference Standard UL RECOGNIZED
Time@Peak Reflow Temperature-Max (s) 30

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Compare SMCG51A-M3/9AT with alternatives