MXLSMCJLCE100ATR vs SMCJ100A-T3 feature comparison

MXLSMCJLCE100ATR Microsemi Corporation

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SMCJ100A-T3 Sangdest Microelectronics (Nanjing) Co Ltd

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Rohs Code No No
Part Life Cycle Code Transferred Obsolete
Ihs Manufacturer MICROSEMI CORP SANGDEST MICROELECTRONICS (NANJING) CO LTD
Part Package Code DO-214AB
Package Description PLASTIC, SMCJ, 2 PIN R-PDSO-C2
Pin Count 2
Reach Compliance Code unknown unknown
ECCN Code EAR99
HTS Code 8541.10.00.50
Additional Feature TR, 7 INCH: 750
Breakdown Voltage-Max 123 V 122.68 V
Breakdown Voltage-Min 111 V 111 V
Breakdown Voltage-Nom 117 V
Clamping Voltage-Max 162 V
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code DO-214AB DO-214AB
JESD-30 Code R-PDSO-C2 R-PDSO-C2
JESD-609 Code e0
Non-rep Peak Rev Power Dis-Max 1500 W 1500 W
Number of Elements 1 1
Number of Terminals 2 2
Operating Temperature-Max 150 °C
Operating Temperature-Min -65 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Polarity UNIDIRECTIONAL UNIDIRECTIONAL
Power Dissipation-Max 5 W
Qualification Status Not Qualified Not Qualified
Rep Pk Reverse Voltage-Max 100 V 100 V
Surface Mount YES YES
Technology AVALANCHE AVALANCHE
Terminal Finish Tin/Lead (Sn/Pb)
Terminal Form C BEND C BEND
Terminal Position DUAL DUAL
Base Number Matches 1 2
Moisture Sensitivity Level 1

Compare MXLSMCJLCE100ATR with alternatives

Compare SMCJ100A-T3 with alternatives