MXLSMCGLCE18ATR vs MSMCGLCE18AE3 feature comparison

MXLSMCGLCE18ATR Microsemi Corporation

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MSMCGLCE18AE3 Microchip Technology Inc

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Rohs Code No Yes
Part Life Cycle Code Transferred Active
Ihs Manufacturer MICROSEMI CORP MICROCHIP TECHNOLOGY INC
Part Package Code DO-215AB
Package Description PLASTIC, SMCG, 2 PIN SMCG, 2 PIN
Pin Count 2
Reach Compliance Code unknown compliant
ECCN Code EAR99
HTS Code 8541.10.00.50
Additional Feature TR, 7 INCH: 750 HIGH RELIABILITY
Breakdown Voltage-Max 22.1 V 22.1 V
Breakdown Voltage-Min 20 V 20 V
Breakdown Voltage-Nom 21.05 V 21.05 V
Clamping Voltage-Max 29.2 V 29.2 V
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code DO-215AB DO-215AB
JESD-30 Code R-PDSO-G2 R-PDSO-G2
JESD-609 Code e0 e3
Non-rep Peak Rev Power Dis-Max 1500 W 1500 W
Number of Elements 1 1
Number of Terminals 2 2
Operating Temperature-Max 150 °C 150 °C
Operating Temperature-Min -65 °C -65 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Polarity UNIDIRECTIONAL UNIDIRECTIONAL
Power Dissipation-Max 5 W 5 W
Qualification Status Not Qualified Not Qualified
Rep Pk Reverse Voltage-Max 18 V 18 V
Surface Mount YES YES
Technology AVALANCHE AVALANCHE
Terminal Finish Tin/Lead (Sn/Pb) MATTE TIN
Terminal Form GULL WING GULL WING
Terminal Position DUAL DUAL
Base Number Matches 1 2
Factory Lead Time 40 Weeks
Diode Capacitance-Min 100 pF
Moisture Sensitivity Level 1
Reference Standard IEC-61000-4-2, 4-4, 4-5
Reverse Current-Max 5 µA
Reverse Test Voltage 18 V

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Compare MSMCGLCE18AE3 with alternatives