MXLSMCGLCE130AE3TR
vs
MSMCGLCE130AE3
feature comparison
All Stats
Differences Only
Rohs Code
Part Life Cycle Code
Transferred
Active
Ihs Manufacturer
MICROSEMI CORP
MICROCHIP TECHNOLOGY INC
Part Package Code
DO-215AB
Package Description
R-PDSO-G2
SMCG, 2 PIN
Pin Count
2
Reach Compliance Code
compliant
compliant
ECCN Code
EAR99
HTS Code
8541.10.00.50
Additional Feature
TR, 7 INCH: 750
HIGH RELIABILITY
Breakdown Voltage-Max
159 V
159 V
Breakdown Voltage-Min
144 V
144 V
Breakdown Voltage-Nom
151.5 V
151.5 V
Clamping Voltage-Max
209 V
209 V
Configuration
SINGLE
SINGLE
Diode Element Material
SILICON
SILICON
Diode Type
TRANS VOLTAGE SUPPRESSOR DIODE
TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code
DO-215AB
DO-215AB
JESD-30 Code
R-PDSO-G2
R-PDSO-G2
Non-rep Peak Rev Power Dis-Max
1500 W
1500 W
Number of Elements
1
1
Number of Terminals
2
2
Operating Temperature-Max
150 °C
150 °C
Operating Temperature-Min
-65 °C
-65 °C
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
SMALL OUTLINE
SMALL OUTLINE
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Polarity
UNIDIRECTIONAL
UNIDIRECTIONAL
Power Dissipation-Max
5 W
5 W
Qualification Status
Not Qualified
Not Qualified
Rep Pk Reverse Voltage-Max
130 V
130 V
Surface Mount
YES
YES
Technology
AVALANCHE
AVALANCHE
Terminal Form
GULL WING
GULL WING
Terminal Position
DUAL
DUAL
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
Base Number Matches
1
2
Factory Lead Time
40 Weeks
Diode Capacitance-Min
90 pF
JESD-609 Code
e3
Moisture Sensitivity Level
1
Reference Standard
IEC-61000-4-2, 4-4, 4-5
Reverse Current-Max
5 µA
Reverse Test Voltage
130 V
Terminal Finish
MATTE TIN
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