MXLSMCGLCE110AE3 vs MQSMCG5660AE3 feature comparison

MXLSMCGLCE110AE3 Microchip Technology Inc

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MQSMCG5660AE3 Microsemi Corporation

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Rohs Code Yes Yes
Part Life Cycle Code Active Obsolete
Ihs Manufacturer MICROCHIP TECHNOLOGY INC MICROSEMI CORP
Package Description ROHS COMPLIANT, PLASTIC, SMCG, 2 PIN R-PDSO-G2
Reach Compliance Code compliant unknown
Additional Feature HIGH RELIABILITY HIGH RELIABILITY
Breakdown Voltage-Max 135 V 137 V
Breakdown Voltage-Min 122 V 124 V
Breakdown Voltage-Nom 128.5 V 130.5 V
Clamping Voltage-Max 178 V 179 V
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code DO-215AB DO-215AB
JESD-30 Code R-PDSO-G2 R-PDSO-G2
JESD-609 Code e3 e3
Moisture Sensitivity Level 1
Non-rep Peak Rev Power Dis-Max 1500 W 1500 W
Number of Elements 1 1
Number of Terminals 2 2
Operating Temperature-Max 150 °C 150 °C
Operating Temperature-Min -65 °C -55 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Polarity UNIDIRECTIONAL UNIDIRECTIONAL
Power Dissipation-Max 5 W 5 W
Qualification Status Not Qualified Not Qualified
Rep Pk Reverse Voltage-Max 110 V 111 V
Surface Mount YES YES
Technology AVALANCHE AVALANCHE
Terminal Finish MATTE TIN MATTE TIN
Terminal Form GULL WING GULL WING
Terminal Position DUAL DUAL
Base Number Matches 2 1
Part Package Code DO-215AB
Pin Count 2
ECCN Code EAR99
HTS Code 8541.10.00.50

Compare MXLSMCGLCE110AE3 with alternatives

Compare MQSMCG5660AE3 with alternatives