MXLSMBJ100AE3/TR vs MSMBJ100ATR feature comparison

MXLSMBJ100AE3/TR Microsemi Corporation

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MSMBJ100ATR Microsemi Corporation

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Yes No
Transferred Transferred
MICROSEMI CORP MICROSEMI CORP
R-PDSO-C2 R-PDSO-C2
not_compliant unknown
EAR99 EAR99
8541.10.00.50 8541.10.00.50
HIGH RELIABILITY HIGH RELIABILITY
123 V 123 V
111 V 111 V
117 V 117 V
162 V 162 V
SINGLE SINGLE
SILICON SILICON
TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
DO-214AA DO-214AA
R-PDSO-C2 R-PDSO-C2
e3 e0
1 1
600 W 600 W
1 1
2 2
150 °C 150 °C
-65 °C -65 °C
PLASTIC/EPOXY PLASTIC/EPOXY
RECTANGULAR RECTANGULAR
SMALL OUTLINE SMALL OUTLINE
250
UNIDIRECTIONAL UNIDIRECTIONAL
1.38 W 1.38 W
Not Qualified Not Qualified
100 V 100 V
YES YES
AVALANCHE AVALANCHE
Matte Tin (Sn) - annealed TIN LEAD
C BEND C BEND
DUAL DUAL
30
1 1
No
DO-214AA
2

Compare MXLSMBJ100AE3/TR with alternatives

Compare MSMBJ100ATR with alternatives