MXLPLAD30KP130CA
vs
TPK30KP130CA
feature comparison
All Stats
Differences Only
Rohs Code
No
Yes
Part Life Cycle Code
Active
Active
Ihs Manufacturer
MICROCHIP TECHNOLOGY INC
SANGDEST MICROELECTRONICS (NANJING) CO LTD
Package Description
S-PSSO-G1
Reach Compliance Code
compliant
compliant
ECCN Code
EAR99
EAR99
HTS Code
8541.10.00.50
8541.10.00.50
Additional Feature
HIGH RELIABILITY
Breakdown Voltage-Max
159 V
159 V
Breakdown Voltage-Min
144 V
144 V
Breakdown Voltage-Nom
151.5 V
151.5 V
Clamping Voltage-Max
209 V
209 V
Configuration
SINGLE
SINGLE
Diode Element Material
SILICON
SILICON
Diode Type
TRANS VOLTAGE SUPPRESSOR DIODE
TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 Code
S-PSSO-G1
S-PSSO-G1
JESD-609 Code
e0
Moisture Sensitivity Level
1
Non-rep Peak Rev Power Dis-Max
30000 W
30000 W
Number of Elements
1
1
Number of Terminals
1
1
Operating Temperature-Max
150 °C
150 °C
Operating Temperature-Min
-55 °C
-55 °C
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
SQUARE
SQUARE
Package Style
SMALL OUTLINE
SMALL OUTLINE
Polarity
BIDIRECTIONAL
BIDIRECTIONAL
Power Dissipation-Max
2.5 W
2.5 W
Qualification Status
Not Qualified
Reference Standard
IEC-61000-4-2, 4-4, 4-5; MIL-19500
Rep Pk Reverse Voltage-Max
130 V
130 V
Surface Mount
YES
YES
Technology
AVALANCHE
AVALANCHE
Terminal Finish
TIN LEAD
PURE TIN
Terminal Form
GULL WING
GULL WING
Terminal Position
SINGLE
SINGLE
Base Number Matches
4
1
Category CO2 Kg
8.54
Compliance Temperature Grade
Military: -55C to +150C
EU RoHS Version
RoHS 2 (2015/863/EU)
Candidate List Date
2020-01-16
Conflict Mineral Status
DRC Conflict Free
Conflict Mineral Status Source
CMRT V6.10
Case Connection
CATHODE
Reverse Current-Max
200 µA
Reverse Test Voltage
130 V
Compare MXLPLAD30KP130CA with alternatives
Compare TPK30KP130CA with alternatives