MXLPLAD15KP58ATR
vs
MXLPLAD15KP58AE3TR
feature comparison
All Stats
Differences Only
Pbfree Code
No
Rohs Code
No
Yes
Part Life Cycle Code
Transferred
Active
Ihs Manufacturer
MICROSEMI CORP
MICROCHIP TECHNOLOGY INC
Package Description
R-PSSO-G1
R-PSSO-G1
Pin Count
1
Reach Compliance Code
compliant
compliant
ECCN Code
EAR99
EAR99
HTS Code
8541.10.00.50
8541.10.00.50
Additional Feature
HIGH RELIABILITY
HIGH RELIABILITY
Breakdown Voltage-Max
71.2 V
71.2 V
Breakdown Voltage-Min
64.4 V
64.4 V
Breakdown Voltage-Nom
67.8 V
67.8 V
Case Connection
CATHODE
CATHODE
Clamping Voltage-Max
93.6 V
93.6 V
Configuration
SINGLE
SINGLE
Diode Element Material
SILICON
SILICON
Diode Type
TRANS VOLTAGE SUPPRESSOR DIODE
TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 Code
R-PSSO-G1
R-PSSO-G1
JESD-609 Code
e0
Non-rep Peak Rev Power Dis-Max
15000 W
15000 W
Number of Elements
1
1
Number of Terminals
1
1
Operating Temperature-Max
150 °C
150 °C
Operating Temperature-Min
-55 °C
-55 °C
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
SMALL OUTLINE
SMALL OUTLINE
Polarity
UNIDIRECTIONAL
UNIDIRECTIONAL
Power Dissipation-Max
2.5 W
2.5 W
Qualification Status
Not Qualified
Not Qualified
Reference Standard
MIL-19500
MIL-19500
Rep Pk Reverse Voltage-Max
58 V
58 V
Surface Mount
YES
YES
Technology
AVALANCHE
AVALANCHE
Terminal Finish
TIN LEAD
Terminal Form
GULL WING
GULL WING
Terminal Position
SINGLE
SINGLE
Base Number Matches
2
2
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
Compare MXLPLAD15KP58ATR with alternatives
Compare MXLPLAD15KP58AE3TR with alternatives