MXLPLAD15KP10AE3TR
vs
MXPLAD15KP10AE3/TR
feature comparison
All Stats
Differences Only
Rohs Code
Part Life Cycle Code
Active
Transferred
Ihs Manufacturer
MICROCHIP TECHNOLOGY INC
MICROSEMI CORP
Package Description
R-PSSO-G1
R-PSSO-G1
Reach Compliance Code
compliant
compliant
ECCN Code
EAR99
EAR99
HTS Code
8541.10.00.50
8541.10.00.50
Additional Feature
HIGH RELIABILITY
HIGH RELIABILITY
Breakdown Voltage-Max
12.3 V
12.3 V
Breakdown Voltage-Min
11.1 V
11.1 V
Breakdown Voltage-Nom
11.7 V
11.7 V
Case Connection
CATHODE
CATHODE
Clamping Voltage-Max
17 V
17 V
Configuration
SINGLE
SINGLE
Diode Element Material
SILICON
SILICON
Diode Type
TRANS VOLTAGE SUPPRESSOR DIODE
TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 Code
R-PSSO-G1
R-PSSO-G1
Non-rep Peak Rev Power Dis-Max
15000 W
15000 W
Number of Elements
1
1
Number of Terminals
1
1
Operating Temperature-Max
150 °C
150 °C
Operating Temperature-Min
-55 °C
-55 °C
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
SMALL OUTLINE
SMALL OUTLINE
Peak Reflow Temperature (Cel)
NOT SPECIFIED
NOT SPECIFIED
Polarity
UNIDIRECTIONAL
UNIDIRECTIONAL
Power Dissipation-Max
2.5 W
2.5 W
Qualification Status
Not Qualified
Not Qualified
Reference Standard
MIL-19500
MIL-19500
Rep Pk Reverse Voltage-Max
10 V
10 V
Surface Mount
YES
YES
Technology
AVALANCHE
AVALANCHE
Terminal Form
GULL WING
GULL WING
Terminal Position
SINGLE
SINGLE
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
NOT SPECIFIED
Base Number Matches
1
2
Compare MXLPLAD15KP10AE3TR with alternatives
Compare MXPLAD15KP10AE3/TR with alternatives