MXLC10AE3TR vs JAN1N5635A feature comparison

MXLC10AE3TR Microsemi Corporation

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JAN1N5635A Semicon Components Inc

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Rohs Code Yes No
Part Life Cycle Code Transferred Obsolete
Ihs Manufacturer MICROSEMI CORP SEMICON COMPONENTS INC
Part Package Code DO-13
Package Description O-MALF-W2
Pin Count 2
Reach Compliance Code compliant unknown
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.50 8541.10.00.50
Breakdown Voltage-Max 12.3 V 12.6 V
Breakdown Voltage-Min 11.1 V 11.4 V
Case Connection CATHODE ISOLATED
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code DO-202AA
JESD-30 Code O-MALF-W2 O-XALF-W2
Non-rep Peak Rev Power Dis-Max 1500 W 1500 W
Number of Elements 1 1
Number of Terminals 2 2
Operating Temperature-Max 175 °C 175 °C
Operating Temperature-Min -65 °C -65 °C
Package Body Material METAL UNSPECIFIED
Package Shape ROUND ROUND
Package Style LONG FORM LONG FORM
Polarity UNIDIRECTIONAL UNIDIRECTIONAL
Power Dissipation-Max 1 W 1 W
Reference Standard MIL-19500 MIL-19500/500
Rep Pk Reverse Voltage-Max 10 V 10 V
Surface Mount NO NO
Technology AVALANCHE AVALANCHE
Terminal Form WIRE WIRE
Terminal Position AXIAL AXIAL
Base Number Matches 1 7
Breakdown Voltage-Nom 12 V
Clamping Voltage-Max 16.7 V
JESD-609 Code e0
Qualification Status Not Qualified
Reverse Current-Max 5 µA
Terminal Finish TIN LEAD

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