MX1N8168
vs
MS1N8168US
feature comparison
All Stats
Differences Only
Rohs Code
Part Life Cycle Code
Active
Active
Ihs Manufacturer
MICROCHIP TECHNOLOGY INC
MICROCHIP TECHNOLOGY INC
Reach Compliance Code
compliant
compliant
Factory Lead Time
25 Weeks
32 Weeks
Additional Feature
HIGH RELIABILITY
HIGH RELIABILITY
Breakdown Voltage-Min
48.5 V
48.5 V
Case Connection
ISOLATED
ISOLATED
Clamping Voltage-Max
70.1 V
70.1 V
Configuration
SINGLE
SINGLE
Diode Element Material
SILICON
SILICON
Diode Type
TRANS VOLTAGE SUPPRESSOR DIODE
TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 Code
O-LALF-W2
O-LELF-R2
Non-rep Peak Rev Power Dis-Max
150 W
150 W
Number of Elements
1
1
Number of Terminals
2
2
Operating Temperature-Max
175 °C
175 °C
Operating Temperature-Min
-55 °C
-55 °C
Package Body Material
GLASS
GLASS
Package Shape
ROUND
ROUND
Package Style
LONG FORM
LONG FORM
Polarity
UNIDIRECTIONAL
UNIDIRECTIONAL
Power Dissipation-Max
1 W
1 W
Reference Standard
IEC-61000-4-2,4-4,4-5
IEC-61000-4-2, 4-4; MIL-19500
Rep Pk Reverse Voltage-Max
43 V
43 V
Reverse Current-Max
0.5 µA
Surface Mount
NO
YES
Technology
AVALANCHE
AVALANCHE
Terminal Form
WIRE
WRAP AROUND
Terminal Position
AXIAL
END
Base Number Matches
2
1
Package Description
MELF-2
Compare MX1N8168 with alternatives
Compare MS1N8168US with alternatives