MX1N8168 vs MQ1N8168US feature comparison

MX1N8168 Microchip Technology Inc

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MQ1N8168US Microchip Technology Inc

Buy Now Datasheet
Rohs Code No No
Part Life Cycle Code Active Active
Ihs Manufacturer MICROCHIP TECHNOLOGY INC MICROCHIP TECHNOLOGY INC
Reach Compliance Code compliant compliant
Factory Lead Time 25 Weeks 25 Weeks
Additional Feature HIGH RELIABILITY HIGH RELIABILITY
Breakdown Voltage-Min 48.5 V 48.5 V
Case Connection ISOLATED ISOLATED
Clamping Voltage-Max 70.1 V 70.1 V
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 Code O-LALF-W2 O-LELF-R2
Non-rep Peak Rev Power Dis-Max 150 W 150 W
Number of Elements 1 1
Number of Terminals 2 2
Operating Temperature-Max 175 °C 175 °C
Operating Temperature-Min -55 °C -55 °C
Package Body Material GLASS GLASS
Package Shape ROUND ROUND
Package Style LONG FORM LONG FORM
Polarity UNIDIRECTIONAL UNIDIRECTIONAL
Power Dissipation-Max 1 W 1 W
Reference Standard IEC-61000-4-2,4-4,4-5 IEC-61000-4-2, 4-4; MIL-19500
Rep Pk Reverse Voltage-Max 43 V 43 V
Reverse Current-Max 0.5 µA
Surface Mount NO YES
Technology AVALANCHE AVALANCHE
Terminal Form WIRE WRAP AROUND
Terminal Position AXIAL END
Base Number Matches 2 1
Package Description MELF-2

Compare MX1N8168 with alternatives

Compare MQ1N8168US with alternatives