MX1N6298AE3 vs 1N6297ATR feature comparison

MX1N6298AE3 Microsemi Corporation

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1N6297ATR Central Semiconductor Corp

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Rohs Code Yes No
Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer MICROSEMI CORP CENTRAL SEMICONDUCTOR CORP
Package Description O-PALF-W2 O-PALF-W2
Pin Count 2
Manufacturer Package Code CASE 1
Reach Compliance Code unknown compliant
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.50 8541.10.00.50
Breakdown Voltage-Max 137 V
Breakdown Voltage-Min 124 V
Case Connection ISOLATED ISOLATED
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 Code O-PALF-W2 O-PALF-W2
JESD-609 Code e3 e0
Moisture Sensitivity Level 1
Non-rep Peak Rev Power Dis-Max 1500 W 1500 W
Number of Elements 1 1
Number of Terminals 2 2
Operating Temperature-Max 150 °C
Operating Temperature-Min -65 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape ROUND ROUND
Package Style LONG FORM LONG FORM
Polarity UNIDIRECTIONAL UNIDIRECTIONAL
Power Dissipation-Max 1.52 W
Qualification Status Not Qualified Not Qualified
Rep Pk Reverse Voltage-Max 111 V 102 V
Surface Mount NO NO
Technology AVALANCHE AVALANCHE
Terminal Finish MATTE TIN TIN LEAD
Terminal Form WIRE WIRE
Terminal Position AXIAL AXIAL
Base Number Matches 1 3
Pbfree Code No
JEDEC-95 Code DO-201

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