MVUPTB28TR7 vs MXLUPTB28E3 feature comparison

MVUPTB28TR7 Microsemi Corporation

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MXLUPTB28E3 Microchip Technology Inc

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Rohs Code No Yes
Part Life Cycle Code Obsolete Active
Ihs Manufacturer MICROSEMI CORP MICROCHIP TECHNOLOGY INC
Part Package Code DO-216AA
Package Description R-PDSO-G1
Pin Count 2
Reach Compliance Code unknown compliant
ECCN Code EAR99
HTS Code 8541.10.00.50
Additional Feature LOW LEAKAGE CURRENT HIGH RELIABILITY, MIL-STD-750
Breakdown Voltage-Min 31 V 31 V
Case Connection ANODE
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code DO-216AA DO-216AA
JESD-30 Code R-PDSO-G1 S-PSSO-G1
JESD-609 Code e0 e3
Non-rep Peak Rev Power Dis-Max 150 W 1000 W
Number of Elements 1 1
Number of Terminals 1 1
Operating Temperature-Max 150 °C 150 °C
Operating Temperature-Min -65 °C -65 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR SQUARE
Package Style SMALL OUTLINE SMALL OUTLINE
Polarity BIDIRECTIONAL BIDIRECTIONAL
Power Dissipation-Max 2.5 W 2.5 W
Qualification Status Not Qualified
Rep Pk Reverse Voltage-Max 28 V 28 V
Surface Mount YES YES
Technology AVALANCHE AVALANCHE
Terminal Finish TIN LEAD MATTE TIN
Terminal Form GULL WING GULL WING
Terminal Position DUAL SINGLE
Base Number Matches 1 2
Factory Lead Time 40 Weeks
Clamping Voltage-Max 47.8 V
Moisture Sensitivity Level 1
Reference Standard AEC-Q101; IEC-61000-4-2, 4-4, 4-5; MIL-PRF-19500
Reverse Current-Max 1 µA
Reverse Test Voltage 28 V

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