MVSMCJLCE160TR vs SMCJ170AM6 feature comparison

MVSMCJLCE160TR Microsemi Corporation

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SMCJ170AM6 Taiwan Semiconductor

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Rohs Code No Yes
Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer MICROSEMI CORP TAIWAN SEMICONDUCTOR CO LTD
Part Package Code DO-214AB
Package Description R-PDSO-C2 R-PDSO-C2
Pin Count 2
Reach Compliance Code unknown not_compliant
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.50 8541.10.00.50
Additional Feature TR, 7 INCH: 750
Breakdown Voltage-Max 218 V 209 V
Breakdown Voltage-Min 178 V 189 V
Breakdown Voltage-Nom 198 V 199 V
Clamping Voltage-Max 287 V 275 V
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code DO-214AB DO-214AB
JESD-30 Code R-PDSO-C2 R-PDSO-C2
JESD-609 Code e0 e3
Moisture Sensitivity Level 1 1
Non-rep Peak Rev Power Dis-Max 1500 W 1500 W
Number of Elements 1 1
Number of Terminals 2 2
Operating Temperature-Max 150 °C 150 °C
Operating Temperature-Min -65 °C -55 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Polarity UNIDIRECTIONAL UNIDIRECTIONAL
Power Dissipation-Max 5 W 5 W
Qualification Status Not Qualified
Reference Standard MIL-19500 AEC-Q101
Rep Pk Reverse Voltage-Max 160 V 170 V
Surface Mount YES YES
Technology AVALANCHE AVALANCHE
Terminal Finish TIN LEAD MATTE TIN
Terminal Form C BEND C BEND
Terminal Position DUAL DUAL
Base Number Matches 1 1
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 30

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Compare SMCJ170AM6 with alternatives