MVSMCGLCE13AE3
vs
MSMCGLCE13AE3TR
feature comparison
All Stats
Differences Only
Rohs Code
Part Life Cycle Code
Obsolete
Transferred
Ihs Manufacturer
MICROSEMI CORP
MICROSEMI CORP
Part Package Code
DO-215AB
DO-215AB
Package Description
R-PDSO-G2
R-PDSO-G2
Pin Count
2
2
Reach Compliance Code
unknown
compliant
ECCN Code
EAR99
EAR99
HTS Code
8541.10.00.50
8541.10.00.50
Breakdown Voltage-Max
15.9 V
15.9 V
Breakdown Voltage-Min
14.4 V
14.4 V
Breakdown Voltage-Nom
15.15 V
15.15 V
Clamping Voltage-Max
21.5 V
21.5 V
Configuration
SINGLE
SINGLE
Diode Element Material
SILICON
SILICON
Diode Type
TRANS VOLTAGE SUPPRESSOR DIODE
TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code
DO-215AB
DO-215AB
JESD-30 Code
R-PDSO-G2
R-PDSO-G2
JESD-609 Code
e3
Moisture Sensitivity Level
1
Non-rep Peak Rev Power Dis-Max
1500 W
1500 W
Number of Elements
1
1
Number of Terminals
2
2
Operating Temperature-Max
150 °C
150 °C
Operating Temperature-Min
-65 °C
-65 °C
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
SMALL OUTLINE
SMALL OUTLINE
Polarity
UNIDIRECTIONAL
UNIDIRECTIONAL
Power Dissipation-Max
5 W
5 W
Qualification Status
Not Qualified
Not Qualified
Reference Standard
MIL-19500
IEC-61000-4-2, 4-4, 4-5
Rep Pk Reverse Voltage-Max
13 V
13 V
Surface Mount
YES
YES
Technology
AVALANCHE
AVALANCHE
Terminal Finish
MATTE TIN
Terminal Form
GULL WING
GULL WING
Terminal Position
DUAL
DUAL
Base Number Matches
1
1
Additional Feature
HIGH RELIABILITY
Diode Capacitance-Min
100 pF
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Reverse Current-Max
5 µA
Reverse Test Voltage
13 V
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
Compare MVSMCGLCE13AE3 with alternatives
Compare MSMCGLCE13AE3TR with alternatives