MV837
vs
1N4812
feature comparison
Part Life Cycle Code |
Obsolete
|
Obsolete
|
Ihs Manufacturer |
API TECHNOLOGIES CORP
|
INTERNATIONAL SEMICONDUCTOR INC
|
Package Description |
O-LALF-W2
|
O-LALF-W2
|
Reach Compliance Code |
compliant
|
unknown
|
ECCN Code |
EAR99
|
EAR99
|
HTS Code |
8541.10.00.80
|
8541.10.00.80
|
Breakdown Voltage-Min |
30 V
|
40 V
|
Case Connection |
ISOLATED
|
ISOLATED
|
Configuration |
SINGLE
|
SINGLE
|
Diode Cap Tolerance |
10%
|
20%
|
Diode Capacitance Ratio-Min |
1.9
|
2.32
|
Diode Capacitance-Nom |
56 pF
|
56 pF
|
Diode Element Material |
SILICON
|
SILICON
|
Diode Type |
VARIABLE CAPACITANCE DIODE
|
VARIABLE CAPACITANCE DIODE
|
Frequency Band |
VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY
|
|
JEDEC-95 Code |
DO-7
|
DO-7
|
JESD-30 Code |
O-LALF-W2
|
O-LALF-W2
|
Number of Elements |
1
|
1
|
Number of Terminals |
2
|
2
|
Operating Temperature-Max |
175 °C
|
|
Package Body Material |
GLASS
|
GLASS
|
Package Shape |
ROUND
|
ROUND
|
Package Style |
LONG FORM
|
LONG FORM
|
Power Dissipation-Max |
0.4 W
|
0.4 W
|
Qualification Status |
Not Qualified
|
Not Qualified
|
Quality Factor-Min |
15
|
15
|
Rep Pk Reverse Voltage-Max |
30 V
|
40 V
|
Reverse Current-Max |
0.2 µA
|
|
Reverse Test Voltage |
25 V
|
|
Surface Mount |
NO
|
NO
|
Terminal Form |
WIRE
|
WIRE
|
Terminal Position |
AXIAL
|
AXIAL
|
Variable Capacitance Diode Classification |
ABRUPT
|
ABRUPT
|
Base Number Matches |
8
|
16
|
Additional Feature |
|
HIGH Q, LOW LEAKAGE
|
|
|
|
Compare MV837 with alternatives
Compare 1N4812 with alternatives