MV834
vs
MV834
feature comparison
| Part Life Cycle Code |
Transferred
|
Obsolete
|
| Ihs Manufacturer |
COBHAM PLC
|
MSI ELECTRONICS INC
|
| Package Description |
GLASS PACKAGE-2
|
O-LALF-W2
|
| Reach Compliance Code |
unknown
|
unknown
|
| ECCN Code |
EAR99
|
EAR99
|
| HTS Code |
8541.10.00.80
|
8541.10.00.80
|
| Breakdown Voltage-Min |
30 V
|
30 V
|
| Case Connection |
ISOLATED
|
ISOLATED
|
| Configuration |
SINGLE
|
SINGLE
|
| Diode Cap Tolerance |
10%
|
10%
|
| Diode Capacitance Ratio-Min |
1.9
|
1.9
|
| Diode Capacitance-Nom |
33 pF
|
33 pF
|
| Diode Element Material |
SILICON
|
SILICON
|
| Diode Type |
VARIABLE CAPACITANCE DIODE
|
VARIABLE CAPACITANCE DIODE
|
| JEDEC-95 Code |
DO-7
|
|
| JESD-30 Code |
O-LALF-W2
|
O-LALF-W2
|
| JESD-609 Code |
e0
|
|
| Number of Elements |
1
|
1
|
| Number of Terminals |
2
|
2
|
| Package Body Material |
GLASS
|
GLASS
|
| Package Shape |
ROUND
|
ROUND
|
| Package Style |
LONG FORM
|
LONG FORM
|
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED
|
|
| Power Dissipation-Max |
0.4 W
|
0.4 W
|
| Qualification Status |
Not Qualified
|
Not Qualified
|
| Quality Factor-Min |
20
|
20
|
| Rep Pk Reverse Voltage-Max |
30 V
|
30 V
|
| Surface Mount |
NO
|
NO
|
| Terminal Finish |
TIN LEAD
|
|
| Terminal Form |
WIRE
|
WIRE
|
| Terminal Position |
AXIAL
|
AXIAL
|
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED
|
|
| Variable Capacitance Diode Classification |
ABRUPT
|
ABRUPT
|
| Base Number Matches |
1
|
6
|
| Frequency Band |
|
VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY
|
| Operating Temperature-Max |
|
175 °C
|
| Reverse Current-Max |
|
2e-7 µA
|
| Reverse Test Voltage |
|
25 V
|
|
|
|
Compare MV834 with alternatives
Compare MV834 with alternatives