MV5811AUS
vs
1N5811USE3
feature comparison
Rohs Code |
No
|
Yes
|
Part Life Cycle Code |
Obsolete
|
Transferred
|
Ihs Manufacturer |
MICROSEMI CORP
|
MICROSEMI CORP
|
Package Description |
O-LELF-R2
|
ROHS COMPLIANT, HERMETIC SEALED, GLASS, B, MELF-2
|
Reach Compliance Code |
unknown
|
compliant
|
ECCN Code |
EAR99
|
EAR99
|
HTS Code |
8541.10.00.80
|
8541.10.00.80
|
Additional Feature |
HIGH RELIABILITY
|
HIGH RELIABILITY
|
Application |
ULTRA FAST RECOVERY
|
ULTRA FAST RECOVERY
|
Case Connection |
ISOLATED
|
ISOLATED
|
Configuration |
SINGLE
|
SINGLE
|
Diode Element Material |
SILICON
|
SILICON
|
Diode Type |
RECTIFIER DIODE
|
RECTIFIER DIODE
|
Forward Voltage-Max (VF) |
0.925 V
|
0.875 V
|
JESD-30 Code |
O-LELF-R2
|
O-LELF-R2
|
JESD-609 Code |
e0
|
e3
|
Non-rep Pk Forward Current-Max |
125 A
|
125 A
|
Number of Elements |
1
|
1
|
Number of Phases |
1
|
1
|
Number of Terminals |
2
|
2
|
Operating Temperature-Max |
175 °C
|
175 °C
|
Operating Temperature-Min |
-65 °C
|
-65 °C
|
Output Current-Max |
3 A
|
3 A
|
Package Body Material |
GLASS
|
GLASS
|
Package Shape |
ROUND
|
ROUND
|
Package Style |
LONG FORM
|
LONG FORM
|
Reference Standard |
MIL-19500
|
|
Rep Pk Reverse Voltage-Max |
150 V
|
150 V
|
Reverse Current-Max |
5 µA
|
5 µA
|
Reverse Recovery Time-Max |
0.04 µs
|
0.03 µs
|
Surface Mount |
YES
|
YES
|
Terminal Finish |
TIN LEAD
|
MATTE TIN OVER NICKEL
|
Terminal Form |
WRAP AROUND
|
WRAP AROUND
|
Terminal Position |
END
|
END
|
Base Number Matches |
1
|
2
|
Pbfree Code |
|
Yes
|
Samacsys Manufacturer |
|
Microsemi Corporation
|
Technology |
|
AVALANCHE
|
|
|
|
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