MV1N6281AE3TR vs MA1N6281AE3TR feature comparison

MV1N6281AE3TR Microsemi Corporation

Buy Now Datasheet

MA1N6281AE3TR Microsemi Corporation

Buy Now Datasheet
Rohs Code Yes Yes
Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer MICROSEMI CORP MICROSEMI CORP
Package Description PLASTIC, CASE 1, 2 PIN ROHS COMPLIANT, PLASTIC, CASE 1, 2 PIN
Pin Count 2 2
Manufacturer Package Code CASE 1 CASE 1
Reach Compliance Code unknown unknown
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.50 8541.10.00.50
Breakdown Voltage-Max 28.4 V 28.4 V
Breakdown Voltage-Min 25.7 V 25.7 V
Breakdown Voltage-Nom 27.05 V 27.05 V
Case Connection ISOLATED ISOLATED
Clamping Voltage-Max 37.5 V 37.5 V
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 Code O-PALF-W2 O-PALF-W2
JESD-609 Code e3 e3
Moisture Sensitivity Level 1 1
Non-rep Peak Rev Power Dis-Max 1500 W 1500 W
Number of Elements 1 1
Number of Terminals 2 2
Operating Temperature-Max 150 °C 150 °C
Operating Temperature-Min -65 °C -65 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape ROUND ROUND
Package Style LONG FORM LONG FORM
Polarity UNIDIRECTIONAL UNIDIRECTIONAL
Power Dissipation-Max 1.52 W 1.52 W
Qualification Status Not Qualified Not Qualified
Rep Pk Reverse Voltage-Max 23.1 V 23.1 V
Surface Mount NO NO
Technology AVALANCHE AVALANCHE
Terminal Finish MATTE TIN MATTE TIN
Terminal Form WIRE WIRE
Terminal Position AXIAL AXIAL
Base Number Matches 1 1

Compare MV1N6281AE3TR with alternatives

Compare MA1N6281AE3TR with alternatives