MV1N5235BTR-1 vs 1N5235B-GT3 feature comparison

MV1N5235BTR-1 Microsemi Corporation

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1N5235B-GT3 Sangdest Microelectronics (Nanjing) Co Ltd

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Rohs Code No Yes
Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer MICROSEMI CORP SANGDEST MICROELECTRONICS (NANJING) CO LTD
Part Package Code DO-35
Package Description O-LALF-W2 O-LALF-W2
Pin Count 2
Reach Compliance Code unknown unknown
ECCN Code EAR99
HTS Code 8541.10.00.50
Case Connection ISOLATED ISOLATED
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type ZENER DIODE ZENER DIODE
JEDEC-95 Code DO-204AH DO-35
JESD-30 Code O-LALF-W2 O-LALF-W2
JESD-609 Code e0
Number of Elements 1 1
Number of Terminals 2 2
Operating Temperature-Max 175 °C
Operating Temperature-Min -65 °C
Package Body Material GLASS GLASS
Package Shape ROUND ROUND
Package Style LONG FORM LONG FORM
Polarity UNIDIRECTIONAL UNIDIRECTIONAL
Power Dissipation-Max 0.48 W 0.5 W
Qualification Status Not Qualified Not Qualified
Reference Voltage-Nom 6.8 V 6.8 V
Surface Mount NO NO
Technology ZENER ZENER
Terminal Finish TIN LEAD
Terminal Form WIRE WIRE
Terminal Position AXIAL AXIAL
Voltage Tol-Max 5% 5%
Working Test Current 20 mA 20 mA
Base Number Matches 1 2
Moisture Sensitivity Level 1

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