MURB1620CT
vs
FESB8DTN-G
feature comparison
| Rohs Code |
Yes
|
Yes
|
| Part Life Cycle Code |
Obsolete
|
Active
|
| Ihs Manufacturer |
SANGDEST MICROELECTRONICS (NANJING) CO LTD
|
SENSITRON SEMICONDUCTOR
|
| Package Description |
D2PAK-3/2
|
R-PSSO-G2
|
| Reach Compliance Code |
compliant
|
compliant
|
| ECCN Code |
EAR99
|
EAR99
|
| HTS Code |
8541.10.00.80
|
8541.10.00.80
|
| Additional Feature |
LOW LEAKAGE CURRENT
|
LOW POWER LOSS
|
| Application |
ULTRA FAST RECOVERY
|
EFFICIENCY
|
| Case Connection |
CATHODE
|
CATHODE
|
| Configuration |
COMMON CATHODE, 2 ELEMENTS
|
COMMON CATHODE, 2 ELEMENTS
|
| Diode Element Material |
SILICON
|
SILICON
|
| Diode Type |
RECTIFIER DIODE
|
RECTIFIER DIODE
|
| Forward Voltage-Max (VF) |
1.5 V
|
|
| JESD-30 Code |
R-PSSO-G2
|
R-PSSO-G2
|
| Non-rep Pk Forward Current-Max |
125 A
|
125 A
|
| Number of Elements |
2
|
2
|
| Number of Phases |
1
|
1
|
| Number of Terminals |
2
|
2
|
| Operating Temperature-Max |
150 °C
|
150 °C
|
| Operating Temperature-Min |
-55 °C
|
-50 °C
|
| Output Current-Max |
8 A
|
8 A
|
| Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
| Package Shape |
RECTANGULAR
|
RECTANGULAR
|
| Package Style |
SMALL OUTLINE
|
SMALL OUTLINE
|
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED
|
|
| Rep Pk Reverse Voltage-Max |
200 V
|
200 V
|
| Reverse Current-Max |
10 µA
|
|
| Reverse Recovery Time-Max |
0.035 µs
|
0.035 µs
|
| Surface Mount |
YES
|
YES
|
| Terminal Form |
GULL WING
|
GULL WING
|
| Terminal Position |
SINGLE
|
SINGLE
|
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED
|
|
| Base Number Matches |
13
|
1
|
| Pbfree Code |
|
Yes
|
| Part Package Code |
|
D2PAK
|
| Pin Count |
|
4
|
| JEDEC-95 Code |
|
TO-263AB
|
| Moisture Sensitivity Level |
|
1
|
| Qualification Status |
|
Not Qualified
|
|
|
|
Compare MURB1620CT with alternatives
Compare FESB8DTN-G with alternatives