MURB1610CT vs BYV79EB-100T/R feature comparison

MURB1610CT Diodes Incorporated

Buy Now Datasheet

BYV79EB-100T/R NXP Semiconductors

Buy Now Datasheet
Pbfree Code No
Rohs Code No
Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer DIODES INC NXP SEMICONDUCTORS
Part Package Code TO-263
Package Description R-PSSO-G2 R-PSSO-G2
Pin Count 3
Reach Compliance Code unknown compliant
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.80 8541.10.00.80
Application EFFICIENCY ULTRA FAST SOFT RECOVERY
Case Connection CATHODE CATHODE
Configuration COMMON CATHODE, 2 ELEMENTS SINGLE
Diode Element Material SILICON SILICON
Diode Type RECTIFIER DIODE RECTIFIER DIODE
Forward Voltage-Max (VF) 0.975 V 1.4 V
JESD-30 Code R-PSSO-G2 R-PSSO-G2
JESD-609 Code e0
Non-rep Pk Forward Current-Max 100 A 160 A
Number of Elements 2 1
Number of Phases 1 1
Number of Terminals 2 2
Operating Temperature-Max 150 °C 150 °C
Operating Temperature-Min -65 °C
Output Current-Max 16 A 14 A
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Qualification Status Not Qualified Not Qualified
Rep Pk Reverse Voltage-Max 100 V 100 V
Reverse Recovery Time-Max 0.03 µs 0.03 µs
Surface Mount YES YES
Terminal Finish TIN LEAD
Terminal Form GULL WING GULL WING
Terminal Position SINGLE SINGLE
Base Number Matches 4 1
Additional Feature SURGE CAPABILITY

Compare MURB1610CT with alternatives

Compare BYV79EB-100T/R with alternatives