MUR120 vs HS1DFSH feature comparison

MUR120 Galaxy Microelectronics

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HS1DFSH Taiwan Semiconductor

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Rohs Code Yes Yes
Part Life Cycle Code Active Active
Ihs Manufacturer CHANGZHOU GALAXY CENTURY MICROELECTRONICS CO LTD TAIWAN SEMICONDUCTOR CO LTD
Part Package Code DO-41
Reach Compliance Code unknown not_compliant
ECCN Code EAR99
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type RECTIFIER DIODE RECTIFIER DIODE
Forward Voltage-Max (VF) 0.875 V 1 V
JEDEC-95 Code DO-41
JESD-30 Code O-PALF-W2 R-PDSO-F2
Non-rep Pk Forward Current-Max 35 A 35 A
Number of Elements 1 1
Number of Phases 1 1
Number of Terminals 2 2
Operating Temperature-Max 150 °C 150 °C
Output Current-Max 1 A 1 A
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape ROUND RECTANGULAR
Package Style LONG FORM SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Rep Pk Reverse Voltage-Max 200 V 200 V
Reverse Recovery Time-Max 0.025 µs 0.05 µs
Surface Mount NO YES
Terminal Form WIRE FLAT
Terminal Position AXIAL DUAL
Base Number Matches 27 1
Package Description SOD-128, 2 PIN
Additional Feature FREE WHEELING DIODE, LOW POWER LOSS, SNUBBER DIODE
Application EFFICIENCY
JESD-609 Code e3
Moisture Sensitivity Level 1
Operating Temperature-Min -55 °C
Reference Standard AEC-Q101
Reverse Current-Max 1 µA
Terminal Finish MATTE TIN

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