MUR1100EG
vs
MUR1100E
feature comparison
| Part Life Cycle Code |
Active
|
Obsolete
|
| Ihs Manufacturer |
NEW JERSEY SEMICONDUCTOR PRODUCTS INC
|
MOTOROLA SEMICONDUCTOR PRODUCTS
|
| Reach Compliance Code |
unknown
|
unknown
|
| Configuration |
SINGLE
|
SINGLE
|
| Diode Element Material |
SILICON
|
|
| Diode Type |
RECTIFIER DIODE
|
RECTIFIER DIODE
|
| Number of Elements |
1
|
1
|
| Number of Phases |
1
|
|
| Operating Temperature-Max |
175 °C
|
175 °C
|
| Operating Temperature-Min |
-65 °C
|
|
| Output Current-Max |
1 A
|
1 A
|
| Rep Pk Reverse Voltage-Max |
1000 V
|
1000 V
|
| Reverse Recovery Time-Max |
0.1 µs
|
0.075 µs
|
| Base Number Matches |
2
|
7
|
| Rohs Code |
|
No
|
| Forward Voltage-Max (VF) |
|
1.7 V
|
| JESD-609 Code |
|
e0
|
| Non-rep Pk Forward Current-Max |
|
35 A
|
| Surface Mount |
|
NO
|
| Terminal Finish |
|
Tin/Lead (Sn/Pb)
|
|
|
|