MUPTB28E3 vs MXUPTB28 feature comparison

MUPTB28E3 Microsemi Corporation

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MXUPTB28 Microsemi Corporation

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Rohs Code Yes No
Part Life Cycle Code Transferred Transferred
Ihs Manufacturer MICROSEMI CORP MICROSEMI CORP
Reach Compliance Code compliant compliant
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.50 8541.10.00.50
Breakdown Voltage-Min 31 V 31 V
Clamping Voltage-Max 47.8 V 47.8 V
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code DO-216AA DO-216AA
JESD-30 Code S-PSSO-G1 S-PSSO-G1
JESD-609 Code e3 e0
Moisture Sensitivity Level 1
Non-rep Peak Rev Power Dis-Max 1000 W 1000 W
Number of Elements 1 1
Number of Terminals 1 1
Operating Temperature-Max 150 °C 150 °C
Operating Temperature-Min -65 °C -65 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape SQUARE SQUARE
Package Style SMALL OUTLINE SMALL OUTLINE
Polarity BIDIRECTIONAL BIDIRECTIONAL
Power Dissipation-Max 2.5 W 2.5 W
Reference Standard AEC-Q101; IEC-61000-4-2, 4-4, 4-5; MIL-19500 AEC-Q101; IEC-61000-4-2, 4-4, 4-5; MIL-19500
Rep Pk Reverse Voltage-Max 28 V 28 V
Reverse Current-Max 1 µA 1 µA
Reverse Test Voltage 28 V 28 V
Surface Mount YES YES
Technology AVALANCHE AVALANCHE
Terminal Finish MATTE TIN TIN LEAD
Terminal Form GULL WING GULL WING
Terminal Position SINGLE SINGLE
Base Number Matches 2 2
Part Package Code DO-216AA
Pin Count 2
Qualification Status Not Qualified