MUN5335DW1T1
vs
MUN5334DW1T1G
feature comparison
Pbfree Code |
No
|
Yes
|
Rohs Code |
No
|
|
Part Life Cycle Code |
Active
|
Active
|
Ihs Manufacturer |
ROCHESTER ELECTRONICS LLC
|
ONSEMI
|
Package Description |
CASE 419B-02, 6 PIN
|
HALOGEN FREE AND ROHS COMPLIANT, CASE 419B-02, SC-88, SC-70, 6 PIN
|
Pin Count |
6
|
6
|
Manufacturer Package Code |
CASE 419B-02
|
419B-02
|
Reach Compliance Code |
unknown
|
compliant
|
Additional Feature |
BUILT-IN BIAS RESISTOR RATIO 21.36
|
BUILT-IN BIAS RESISTOR RATIO 2.14
|
Collector Current-Max (IC) |
0.1 A
|
0.1 A
|
Collector-Emitter Voltage-Max |
50 V
|
50 V
|
Configuration |
SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR
|
SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR
|
DC Current Gain-Min (hFE) |
80
|
80
|
JESD-30 Code |
R-PDSO-G6
|
R-PDSO-G6
|
JESD-609 Code |
e0
|
e3
|
Moisture Sensitivity Level |
NOT SPECIFIED
|
1
|
Number of Elements |
2
|
2
|
Number of Terminals |
6
|
6
|
Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
Package Shape |
RECTANGULAR
|
RECTANGULAR
|
Package Style |
SMALL OUTLINE
|
SMALL OUTLINE
|
Peak Reflow Temperature (Cel) |
NOT SPECIFIED
|
260
|
Polarity/Channel Type |
NPN AND PNP
|
NPN AND PNP
|
Qualification Status |
COMMERCIAL
|
Not Qualified
|
Surface Mount |
YES
|
YES
|
Terminal Finish |
TIN LEAD
|
Matte Tin (Sn) - annealed
|
Terminal Form |
GULL WING
|
GULL WING
|
Terminal Position |
DUAL
|
DUAL
|
Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED
|
30
|
Transistor Application |
SWITCHING
|
SWITCHING
|
Transistor Element Material |
SILICON
|
SILICON
|
Base Number Matches |
1
|
2
|
Part Package Code |
|
SC-88/SC70-6/SOT-363 6 LEAD
|
ECCN Code |
|
EAR99
|
Factory Lead Time |
|
10 Weeks
|
Samacsys Manufacturer |
|
onsemi
|
Operating Temperature-Max |
|
150 °C
|
Operating Temperature-Min |
|
-55 °C
|
Power Dissipation-Max (Abs) |
|
0.385 W
|
VCEsat-Max |
|
0.25 V
|
|
|
|
Compare MUN5335DW1T1 with alternatives
Compare MUN5334DW1T1G with alternatives