MUN5331DW1T1
vs
PUMD10T/R
feature comparison
| Rohs Code |
No
|
Yes
|
| Part Life Cycle Code |
Obsolete
|
Transferred
|
| Ihs Manufacturer |
ON SEMICONDUCTOR
|
NXP SEMICONDUCTORS
|
| Package Description |
SMALL OUTLINE, R-PDSO-G6
|
SMALL OUTLINE, R-PDSO-G6
|
| Pin Count |
6
|
6
|
| Manufacturer Package Code |
CASE 419B-02
|
|
| Reach Compliance Code |
not_compliant
|
unknown
|
| ECCN Code |
EAR99
|
EAR99
|
| Additional Feature |
BUILT-IN BIAS RESISTOR RATIO 1
|
BUILT-IN BIAS RESISTOR RATIO IS 21
|
| Collector Current-Max (IC) |
0.1 A
|
0.1 A
|
| Collector-Emitter Voltage-Max |
50 V
|
50 V
|
| Configuration |
SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR
|
SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR
|
| DC Current Gain-Min (hFE) |
8
|
100
|
| JESD-30 Code |
R-PDSO-G6
|
R-PDSO-G6
|
| JESD-609 Code |
e0
|
e3
|
| Number of Elements |
2
|
2
|
| Number of Terminals |
6
|
6
|
| Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
| Package Shape |
RECTANGULAR
|
RECTANGULAR
|
| Package Style |
SMALL OUTLINE
|
SMALL OUTLINE
|
| Peak Reflow Temperature (Cel) |
235
|
NOT SPECIFIED
|
| Polarity/Channel Type |
NPN AND PNP
|
NPN AND PNP
|
| Power Dissipation-Max (Abs) |
0.15 W
|
|
| Qualification Status |
Not Qualified
|
Not Qualified
|
| Surface Mount |
YES
|
YES
|
| Terminal Finish |
TIN LEAD
|
Tin (Sn)
|
| Terminal Form |
GULL WING
|
GULL WING
|
| Terminal Position |
DUAL
|
DUAL
|
| Transistor Application |
SWITCHING
|
SWITCHING
|
| Transistor Element Material |
SILICON
|
SILICON
|
| Base Number Matches |
3
|
1
|
| Part Package Code |
|
SC-88
|
| Time@Peak Reflow Temperature-Max (s) |
|
NOT SPECIFIED
|
| Transition Frequency-Nom (fT) |
|
230 MHz
|
|
|
|
Compare MUN5331DW1T1 with alternatives
Compare PUMD10T/R with alternatives