MUN5215T1
vs
MUN5215DW1T2
feature comparison
| Rohs Code |
No
|
|
| Part Life Cycle Code |
Obsolete
|
Transferred
|
| Ihs Manufacturer |
MOTOROLA SEMICONDUCTOR PRODUCTS
|
MOTOROLA INC
|
| Package Description |
,
|
SMALL OUTLINE, R-PDSO-G6
|
| Reach Compliance Code |
unknown
|
unknown
|
| Collector Current-Max (IC) |
0.05 A
|
0.1 A
|
| DC Current Gain-Min (hFE) |
160
|
160
|
| Number of Elements |
1
|
2
|
| Polarity/Channel Type |
NPN
|
NPN
|
| Power Dissipation-Max (Abs) |
0.15 W
|
|
| Surface Mount |
YES
|
YES
|
| Transistor Element Material |
SILICON
|
SILICON
|
| Base Number Matches |
5
|
3
|
| ECCN Code |
|
EAR99
|
| HTS Code |
|
8541.21.00.95
|
| Collector-Emitter Voltage-Max |
|
50 V
|
| Configuration |
|
SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR
|
| JESD-30 Code |
|
R-PDSO-G6
|
| Number of Terminals |
|
6
|
| Operating Temperature-Max |
|
150 °C
|
| Package Body Material |
|
PLASTIC/EPOXY
|
| Package Shape |
|
RECTANGULAR
|
| Package Style |
|
SMALL OUTLINE
|
| Power Dissipation Ambient-Max |
|
0.15 W
|
| Qualification Status |
|
Not Qualified
|
| Terminal Form |
|
GULL WING
|
| Terminal Position |
|
DUAL
|
| VCEsat-Max |
|
0.25 V
|
|
|
|