MUN5213DW1T1
vs
MUN5213DW1T1G
feature comparison
All Stats
Differences Only
Part Life Cycle Code
Transferred
Active
Ihs Manufacturer
MOTOROLA INC
ONSEMI
Package Description
SMALL OUTLINE, R-PDSO-G6
Reach Compliance Code
unknown
compliant
ECCN Code
EAR99
EAR99
HTS Code
8541.21.00.95
Additional Feature
BUILT IN BIAS RESISTOR RATIO IS 1
BUILT-IN BIAS RESISTOR RATIO IS 1
Collector Current-Max (IC)
0.1 A
0.1 A
Collector-Emitter Voltage-Max
50 V
50 V
Configuration
SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR
SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR
DC Current Gain-Min (hFE)
80
80
JESD-30 Code
R-PDSO-G6
R-PDSO-G6
JESD-609 Code
e0
e3
Number of Elements
2
2
Number of Terminals
6
6
Operating Temperature-Max
150 °C
150 °C
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
SMALL OUTLINE
SMALL OUTLINE
Polarity/Channel Type
NPN
NPN
Power Dissipation Ambient-Max
0.15 W
Power Dissipation-Max (Abs)
0.15 W
0.385 W
Qualification Status
Not Qualified
Not Qualified
Surface Mount
YES
YES
Terminal Finish
Tin/Lead (Sn/Pb)
Matte Tin (Sn) - annealed
Terminal Form
GULL WING
GULL WING
Terminal Position
DUAL
DUAL
Transistor Element Material
SILICON
SILICON
VCEsat-Max
0.25 V
Base Number Matches
1
2
Pbfree Code
Part Package Code
SC-88/SC70-6/SOT-363 6 LEAD
Pin Count
6
Manufacturer Package Code
419B-02
Factory Lead Time
10 Weeks
Samacsys Manufacturer
onsemi
Moisture Sensitivity Level
1
Peak Reflow Temperature (Cel)
260
Time@Peak Reflow Temperature-Max (s)
30
Transistor Application
SWITCHING
Compare MUN5213DW1T1 with alternatives
Compare MUN5213DW1T1G with alternatives