MUN5137DW1T1
vs
RN1011
feature comparison
| Rohs Code |
No
|
|
| Part Life Cycle Code |
Obsolete
|
Obsolete
|
| Ihs Manufacturer |
ONSEMI
|
TOSHIBA CORP
|
| Part Package Code |
SC-88
|
TO-92
|
| Package Description |
CASE 419B-02, SC-70, SC-88, 6 PIN
|
CYLINDRICAL, O-PBCY-T3
|
| Pin Count |
6
|
3
|
| Manufacturer Package Code |
CASE 419B-02
|
|
| Reach Compliance Code |
not_compliant
|
unknown
|
| ECCN Code |
EAR99
|
EAR99
|
| Factory Lead Time |
4 Weeks
|
|
| Samacsys Manufacturer |
onsemi
|
|
| Additional Feature |
BUILT-IN BIAS RESISTOR RATIO IS 0.47
|
BUILT-IN BIAS RESISTOR
|
| Collector Current-Max (IC) |
0.1 A
|
0.1 A
|
| Collector-Emitter Voltage-Max |
50 V
|
50 V
|
| Configuration |
SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR
|
SINGLE WITH BUILT-IN RESISTOR
|
| DC Current Gain-Min (hFE) |
80
|
120
|
| JESD-30 Code |
R-PDSO-G6
|
O-PBCY-T3
|
| JESD-609 Code |
e0
|
e0
|
| Number of Elements |
2
|
1
|
| Number of Terminals |
6
|
3
|
| Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
| Package Shape |
RECTANGULAR
|
ROUND
|
| Package Style |
SMALL OUTLINE
|
CYLINDRICAL
|
| Peak Reflow Temperature (Cel) |
235
|
|
| Polarity/Channel Type |
PNP
|
NPN
|
| Power Dissipation-Max (Abs) |
0.385 W
|
0.4 W
|
| Qualification Status |
Not Qualified
|
Not Qualified
|
| Surface Mount |
YES
|
NO
|
| Terminal Finish |
TIN LEAD
|
TIN LEAD
|
| Terminal Form |
GULL WING
|
THROUGH-HOLE
|
| Terminal Position |
DUAL
|
BOTTOM
|
| Transistor Application |
SWITCHING
|
SWITCHING
|
| Transistor Element Material |
SILICON
|
SILICON
|
| Base Number Matches |
3
|
2
|
| JEDEC-95 Code |
|
TO-92
|
| Operating Temperature-Max |
|
150 °C
|
| Transition Frequency-Nom (fT) |
|
250 MHz
|
|
|
|
Compare MUN5137DW1T1 with alternatives
Compare RN1011 with alternatives