MUN5137DW1T1 vs BRA143EMP feature comparison

MUN5137DW1T1 onsemi

Buy Now Datasheet

BRA143EMP Hitachi Ltd

Buy Now Datasheet
Rohs Code No
Part Life Cycle Code Obsolete Transferred
Ihs Manufacturer ONSEMI HITACHI LTD
Part Package Code SC-88
Package Description CASE 419B-02, SC-70, SC-88, 6 PIN SMALL OUTLINE, R-PDSO-G3
Pin Count 6 3
Manufacturer Package Code CASE 419B-02
Reach Compliance Code not_compliant unknown
ECCN Code EAR99 EAR99
Factory Lead Time 4 Weeks
Samacsys Manufacturer onsemi
Additional Feature BUILT-IN BIAS RESISTOR RATIO IS 0.47 BUILT IN BIAS RESISTOR RATIO 1
Collector Current-Max (IC) 0.1 A 0.1 A
Collector-Emitter Voltage-Max 50 V 50 V
Configuration SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR SINGLE
DC Current Gain-Min (hFE) 80 20
JESD-30 Code R-PDSO-G6 R-PDSO-G3
JESD-609 Code e0
Number of Elements 2 1
Number of Terminals 6 3
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Cel) 235
Polarity/Channel Type PNP PNP
Power Dissipation-Max (Abs) 0.385 W
Qualification Status Not Qualified Not Qualified
Surface Mount YES YES
Terminal Finish TIN LEAD
Terminal Form GULL WING GULL WING
Terminal Position DUAL DUAL
Transistor Application SWITCHING SWITCHING
Transistor Element Material SILICON SILICON
Base Number Matches 3 3

Compare MUN5137DW1T1 with alternatives

Compare BRA143EMP with alternatives